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X-ray studies of group III-nitride quantum wells with high quality interfaces

dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-14T13:05:34Z
dc.date.available2021-10-14T13:05:34Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4442
dc.sourceIIOimport
dc.titleX-ray studies of group III-nitride quantum wells with high quality interfaces
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.beginpage2300
dc.source.endpage2303
dc.source.journalJ. Vacuum Science and Technology B
dc.source.issue4
dc.source.volume18
imec.availabilityPublished - imec
imec.internalnotes27th Conference on the Physics and Chemistry of Semiconductor Interfaces. 16-20 Jan.2000. Salt Lake City, UT, USA


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