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dc.contributor.authorGorbunov, Maxim
dc.contributor.authorBoufouss, El Hafed
dc.contributor.authorLi, Zheyi
dc.contributor.authorVignon, Bastien
dc.contributor.authorvan de Burgwal, Marcel
dc.contributor.authorBerti, Laurent
dc.contributor.authorThys, Geert
dc.date.accessioned2025-01-23T15:28:06Z
dc.date.available2024-09-21T17:57:49Z
dc.date.available2025-01-23T15:28:06Z
dc.date.issued2024
dc.identifier.issn0018-9499
dc.identifier.otherWOS:001306481700070
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44558.2
dc.sourceWOS
dc.titleTotal Ionizing Dose Effects Sensitivity of Unsalicided Polysilicon Resistors
dc.typeJournal article
dc.contributor.imecauthorBoufouss, El Hafed
dc.contributor.imecauthorLi, Zheyi
dc.contributor.imecauthorVignon, Bastien
dc.contributor.imecauthorBerti, Laurent
dc.contributor.imecauthorThys, Geert
dc.contributor.imecauthorGorbunov, Maxim
dc.contributor.imecauthorvan de Burgwal, Marcel
dc.contributor.orcidimecBoufouss, El Hafed::0000-0002-0208-2615
dc.contributor.orcidimecLi, Zheyi::0000-0002-1740-1711
dc.contributor.orcidimecVignon, Bastien::0000-0001-9220-2539
dc.contributor.orcidimecBerti, Laurent::0000-0002-0388-6498
dc.contributor.orcidimecThys, Geert::0000-0002-5320-7844
dc.contributor.orcidimecGorbunov, Maxim::0000-0002-4017-7033
dc.contributor.orcidimecvan de Burgwal, Marcel::0000-0003-0912-7131
dc.identifier.doi10.1109/TNS.2024.3352491
dc.source.numberofpages7
dc.source.peerreviewyes
dc.source.beginpage1872
dc.source.endpage1878
dc.source.journalIEEE TRANSACTIONS ON NUCLEAR SCIENCE
dc.source.issue8
dc.source.volume71
imec.availabilityPublished - imec
dc.description.wosFundingTextThis work was supported by the European Space Agency (ESA) through the Project "DARE65-Implementation, Evaluation and Release of a Radiation Hardened Mixed-Signal Cell Library in a 65 nmCMOS Technology" under Contract 4000117214/16/NL/LF.


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