Deposition behaviour of metal impurities in acidic cleaning solutions and their impact on effective minority carrier lifetime in n-type silicon solar cells

Abstract

Further increasing the conversion efficiency of silicon solar cells by advanced solar cell concepts like SHJ (Silicon Hetero-Junction), PERT (Passivated Emitter Rear Totally diffused), IBC (Interdigitatecl Back-Contact), requires a highly controlled silicon surface in terms of metal impurity density. The goal of this study is investigating the deposition property of different metals in acidic cleaning solutions and consequently determining the impact of these impurities on the effective minority lifetime of the crystalline silicon solar cell material. The deposition behaviour of impurities is mathematically described with an adsorption isotherm theory. Once attached at the silicon surface, the metal impurity can diffuse into the silicon bulk material during a high temperature process step like diffusion, passivation or contact annealing (firing). First, we have studied the adsorption isotherm behaviour of prominent metal impurities (Fe, Cu, Ti, Co, Cr and Zn) in acidic liquid onto a silicon surface. Moreover, the impact of metal impurities on effective minority carrier lifetime in commercially available n-type Cz-silicon (3-552 Omega cm, 239 cm(2)) is determined. From controlled contamination experiments we can extract an exchange volume, that provides the minimum amount on wet chemical cleaning solution that is required to clean a silicon surface from a given high metal impurity level to a specified low metal impurity level. This exchange volume plays a crucial role by defining feed and bleed recipes on wet chemical cleaning tanks in solar cell manufacturing. A second parameter extracted is the effective minority carrier lifetime degradation of the metal impurities. After deposition on the surface, the impurities are driven into the silicon bulk by high temperature processes. Depending on the lifetime degradation capacity, a relation of effective minority carrier lifetime versus surface contamination level could be identified for each metal impurity. We found Co, Fe and Cu having a strong impact on effective minority carrier lifetime degradation, e.g. 2e10/cm(2) Fe surface concentration can reduce the effective minority carrier lifetime by 75%, while Ti, Zn and Cr are more moderate and only high surface concentrations above 1e12/cm(2) lead to effective minority carrier lifetime degradation of more than 20% compared to the non-contaminated wafers.