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Drift mobile and Hall scattering factors of holes in ultrathin Si1-xGex layers (0.3<x<0.4) grown on Si

dc.contributor.authorLander, Rob
dc.contributor.authorPonomarev, Youri
dc.contributor.authorvan Berkum, J. G. M.
dc.contributor.authorde Boer, W. B.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-14T13:14:03Z
dc.date.available2021-10-14T13:14:03Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4515
dc.sourceIIOimport
dc.titleDrift mobile and Hall scattering factors of holes in ultrathin Si1-xGex layers (0.3<x<0.4) grown on Si
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage2016
dc.source.endpage2023
dc.source.journalJ. Appl. Physics
dc.source.issue4
dc.source.volume88
imec.availabilityPublished - imec


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