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Analysis of selectively grown epitaxial Si1-xGex by spectroscopic ellipsometry and comparison with other established techniques

dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorLibezny, Milan
dc.contributor.authorBlavier, G.
dc.contributor.authorBrijs, Bert
dc.contributor.authorGeenen, Luc
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-14T13:17:22Z
dc.date.available2021-10-14T13:17:22Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4540
dc.sourceIIOimport
dc.titleAnalysis of selectively grown epitaxial Si1-xGex by spectroscopic ellipsometry and comparison with other established techniques
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage751
dc.source.endpage755
dc.source.journalJournal of the Electrochemical Society
dc.source.issue2
dc.source.volume147
imec.availabilityPublished - open access


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