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Influence of tin impurities on the generation and annealing of thermal oxygen donors in Czochralski silicon at 450 degrees C

dc.contributor.authorNeimash, V. B.
dc.contributor.authorKraitchinskii, A.
dc.contributor.authorKras'ko, M.
dc.contributor.authorPuzenko, O.
dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSvensson, B.
dc.contributor.authorKuznetsov, A.
dc.date.accessioned2021-10-14T13:26:40Z
dc.date.available2021-10-14T13:26:40Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4609
dc.sourceIIOimport
dc.titleInfluence of tin impurities on the generation and annealing of thermal oxygen donors in Czochralski silicon at 450 degrees C
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2727
dc.source.endpage2733
dc.source.journalJournal of the Electrochemical Society
dc.source.issue7
dc.source.volume147
imec.availabilityPublished - open access


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