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Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect

dc.contributor.authorNicolett, A. S.
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-14T13:27:52Z
dc.date.available2021-10-14T13:27:52Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4618
dc.sourceIIOimport
dc.titleExtraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage677
dc.source.endpage684
dc.source.journalSolid-State Electronics
dc.source.issue4
dc.source.volume44
imec.availabilityPublished - open access


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