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Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

dc.contributor.authorNistor, Leona
dc.contributor.authorBender, Hugo
dc.contributor.authorVantomme, Andre
dc.contributor.authorWu, Ming Fang
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorO'Donnell, K. P.
dc.contributor.authorMartin, R.
dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-14T13:29:00Z
dc.date.available2021-10-14T13:29:00Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4626
dc.sourceIIOimport
dc.titleDirect evidence of spontaneous quantum dot formation in a thick InGaN epilayer
dc.typeJournal article
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage507
dc.source.endpage509
dc.source.journalApplied Physics Letters
dc.source.issue4
dc.source.volume77
imec.availabilityPublished - open access


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