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Modelling of transconductance-to-current ratio (g(m)ID) analysis on double-gate SOI MOSFETs

dc.contributor.authorKrishnasamy, Rajendran
dc.contributor.authorSamudra, G. S.
dc.date.accessioned2021-10-14T13:37:30Z
dc.date.available2021-10-14T13:37:30Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4683
dc.sourceIIOimport
dc.titleModelling of transconductance-to-current ratio (g(m)ID) analysis on double-gate SOI MOSFETs
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage139
dc.source.endpage144
dc.source.journalSemiconductor Science and Technology
dc.source.issue2
dc.source.volume15
imec.availabilityPublished - open access


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