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Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy

dc.contributor.authorRuttens, Gerlinde
dc.contributor.authorQu, X. P.
dc.contributor.authorZhu, S. Y.
dc.contributor.authorLi, Bing-Zong
dc.contributor.authorDetavernier, C.
dc.contributor.authorVan Meirhaeghe, R. L.
dc.contributor.authorCardon, F.
dc.contributor.authorDonaton, R. A.
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-14T13:41:41Z
dc.date.available2021-10-14T13:41:41Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4711
dc.sourceIIOimport
dc.titleIon-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy
dc.typeJournal article
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.beginpage1942
dc.source.endpage1948
dc.source.journalJ. Vacuum Science and Technology B
dc.source.issue4
dc.source.volume18
imec.availabilityPublished - imec


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