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Impact of the divacancy (?) on the generation-recombination properties of 10MeV proton irradiated Float-Zone silicon diodes

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorGaubas, Eugenijus
dc.contributor.authorOhyama, Hidenori
dc.date.accessioned2021-10-14T13:46:36Z
dc.date.available2021-10-14T13:46:36Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4744
dc.sourceIIOimport
dc.titleImpact of the divacancy (?) on the generation-recombination properties of 10MeV proton irradiated Float-Zone silicon diodes
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage310
dc.source.endpage318
dc.source.journalNuclear Instruments and Methods in Physics Research A
dc.source.volumeA439
imec.availabilityPublished - open access


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