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Deep levels in high-energy proton-irradiated tin-doped n-type Czochralskii silicon

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorNeimash, V. B.
dc.contributor.authorKraitchinskii, A.
dc.contributor.authorKras'ko, N.
dc.contributor.authorPuzenko, O.
dc.contributor.authorBlondeel, A.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-10-14T13:47:51Z
dc.date.available2021-10-14T13:47:51Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4752
dc.sourceIIOimport
dc.titleDeep levels in high-energy proton-irradiated tin-doped n-type Czochralskii silicon
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2838
dc.source.endpage2840
dc.source.journalApplied Physics Letters
dc.source.issue20
dc.source.volume76
imec.availabilityPublished - open access


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