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Limitations of shift-and-ratio based Leff extraction techniques for MOS transistors with halo or pocket implants

dc.contributor.authorvan Meer, Hans
dc.contributor.authorHenson, Kirklen
dc.contributor.authorLyu, Jeong-ho
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorKubicek, Stefan
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-14T14:02:29Z
dc.date.available2021-10-14T14:02:29Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4843
dc.sourceIIOimport
dc.titleLimitations of shift-and-ratio based Leff extraction techniques for MOS transistors with halo or pocket implants
dc.typeJournal article
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage133
dc.source.endpage136
dc.source.journalIEEE Electron Device Letters
dc.source.issue3
dc.source.volume21
imec.availabilityPublished - open access


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