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On the performance of in situ B-doped P+ poly-Si1-xGex gate material for nanometer scale MOS

dc.contributor.authorYousif, M. Y. A.
dc.contributor.authorFriesel, M.
dc.contributor.authorWillander, M.
dc.contributor.authorLundgren, P.
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-14T14:23:18Z
dc.date.available2021-10-14T14:23:18Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4964
dc.sourceIIOimport
dc.titleOn the performance of in situ B-doped P+ poly-Si1-xGex gate material for nanometer scale MOS
dc.typeJournal article
dc.contributor.imecauthorCaymax, Matty
dc.source.peerreviewno
dc.source.beginpage1425
dc.source.endpage1429
dc.source.journalSolid-State Electronics
dc.source.issue8
dc.source.volume44
imec.availabilityPublished - imec


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