Browsing Articles by author "Xiao, Dongping"
Now showing items 1-5 of 5
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AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4
Cheng, Kai; Leys, Maarten; Derluyn, Joff; Degroote, Stefan; Xiao, Dongping; Lorenz, Anne; Boeykens, Steven; Germain, Marianne; Borghs, Gustaaf (2007-01) -
Analytical extraction of small and large signal models for FINFET varactors
Crupi, G.; Schreurs, Dominique; Dehan, Morin; Xiao, Dongping; Caddemi, Alina; Mercha, Abdelkarim; Decoutere, Stefaan (2008) -
Detailed analysis of parasitic loading effects on power performance of GaN-on-Silicon HEMTs
Xiao, Dongping; Schreurs, Dominique; De Raedt, Walter; Derluyn, Joff; Germain, Marianne; Nauwelaers, Bart; Borghs, Gustaaf (2009-12) -
Determination and validation of new nonlinear FinFET model based on lookup ables
Crupi, Giovanni; Schreurs, Dominique; Xiao, Dongping; Caddemi, Alina; Parvais, Bertrand; Mercha, Abdelkarim; Decoutere, Stefaan (2007) -
Wide-band hybrid power amplifier design using GaN FETs
Xiao, Dongping; Schreurs, Dominique; Van Niekerk, Corneel; De Raedt, Walter; Derluyn, Joff; Germain, Marianne; Nauwelaers, Bart; Borghs, Gustaaf (2008-11)