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Characteristics of InAs(0.8)Sb(0.2) photodetectors on GaAs substrates

dc.contributor.authorBesikci, C.
dc.contributor.authorÖzer, Selçuk
dc.contributor.authorVan Hoof, Chris
dc.contributor.authorZimmermann, Lars
dc.contributor.authorJohn, J.
dc.contributor.authorMerken, Patrick
dc.date.accessioned2021-10-14T16:37:18Z
dc.date.available2021-10-14T16:37:18Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5058
dc.sourceIIOimport
dc.titleCharacteristics of InAs(0.8)Sb(0.2) photodetectors on GaAs substrates
dc.typeJournal article
dc.contributor.imecauthorVan Hoof, Chris
dc.source.peerreviewno
dc.source.beginpage992
dc.source.endpage996
dc.source.journalSemiconductor Science and Technology
dc.source.issue12
dc.source.volume16
imec.availabilityPublished - imec


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