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2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE

dc.contributor.authorBougrioua, Zahia
dc.contributor.authorFarvacque, J. L.
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorCarosella, F.
dc.date.accessioned2021-10-14T16:38:44Z
dc.date.available2021-10-14T16:38:44Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5092
dc.sourceIIOimport
dc.title2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.beginpage625
dc.source.endpage628
dc.source.journalPhysica Status Solidi B
dc.source.issue2
dc.source.volume228
imec.availabilityPublished - imec
imec.internalnotesPaper from 4th Int Conf on Nitride Semiconductors, 16-20 July 2001, Denver, CO, USA


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