Show simple item record

Material optimisation for AlGaN/GaN HFET applications

dc.contributor.authorBougrioua, Zahia
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorSharma, N.
dc.contributor.authorWallis, R. H.
dc.contributor.authorCheyns, Jan
dc.contributor.authorJacobs, Koen
dc.contributor.authorThrush, E. J.
dc.contributor.authorConsidine, L.
dc.contributor.authorBeanland, R.
dc.contributor.authorFarvacque, J. L.
dc.contributor.authorHumphreys, C.
dc.date.accessioned2021-10-14T16:38:51Z
dc.date.available2021-10-14T16:38:51Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5094
dc.sourceIIOimport
dc.titleMaterial optimisation for AlGaN/GaN HFET applications
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.beginpage573
dc.source.endpage578
dc.source.journalJournal of Crystal Growth
dc.source.issue3_4
dc.source.volume230
imec.availabilityPublished - imec
imec.internalnotesPaper from: Gallium Nitride EGW-4:2000. Fourth European Workshop on Gallium Nitride. 2-5 July 2000; Nottingham, UK


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record