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Tin doping of silicon for controlling oxygen precipitation and radiation hardness

dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.contributor.authorNeimash, V. B.
dc.contributor.authorKraitchinskii, A.
dc.contributor.authorKrask'o, M.
dc.contributor.authorPuzenko, O.
dc.contributor.authorBlondeel, A.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-10-14T16:42:13Z
dc.date.available2021-10-14T16:42:13Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5148
dc.sourceIIOimport
dc.titleTin doping of silicon for controlling oxygen precipitation and radiation hardness
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpageG738
dc.source.endpageG745
dc.source.journalJournal of the Electrochemical Society
dc.source.issue12
dc.source.volume148
imec.availabilityPublished - imec


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