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Relation between breakdown mode and location in short-channel nMOSFETs and its impact on reliability specifications

dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-14T16:49:05Z
dc.date.available2021-10-14T16:49:05Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5229
dc.sourceIIOimport
dc.titleRelation between breakdown mode and location in short-channel nMOSFETs and its impact on reliability specifications
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.source.peerreviewno
dc.source.beginpage163
dc.source.endpage169
dc.source.journalIEEE Trans. Device and Material Reliability
dc.source.issue3
dc.source.volume1
imec.availabilityPublished - imec


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