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Radiation defects in Sti silicon diodes and their effects on device performance

dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorOhyama, Hidenori
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorPoyai, Amporn
dc.contributor.authorMiura, T.
dc.contributor.authorKobayashi, K.
dc.date.accessioned2021-10-14T17:01:08Z
dc.date.available2021-10-14T17:01:08Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5336
dc.sourceIIOimport
dc.titleRadiation defects in Sti silicon diodes and their effects on device performance
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1217
dc.source.endpage1221
dc.source.journalPhysica B
dc.source.volume308
imec.availabilityPublished - imec
imec.internalnotesThe 21st International Conference on Defects in Semiconductors; 16-20 July 2001; Giessen, Germany


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