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Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy

dc.contributor.authorHens, S.
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorBender, Hugo
dc.contributor.authorBoullart, Werner
dc.contributor.authorVanhaelemeersch, Serge
dc.date.accessioned2021-10-14T17:01:38Z
dc.date.available2021-10-14T17:01:38Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5340
dc.sourceIIOimport
dc.titleChemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy
dc.typeJournal article
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.source.peerreviewno
dc.source.beginpage109
dc.source.endpage111
dc.source.journalMaterials Science in Semiconductor Processing
dc.source.issue1_3
dc.source.volume4
imec.availabilityPublished - imec


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