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Explanation of nMOSFET substrate current after hard gate oxide breakdown

dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorRasras, Mahmoud
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-14T17:07:44Z
dc.date.available2021-10-14T17:07:44Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5386
dc.sourceIIOimport
dc.titleExplanation of nMOSFET substrate current after hard gate oxide breakdown
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.source.peerreviewno
dc.source.beginpage155
dc.source.endpage160
dc.source.journalMicroelectronic Engineering
dc.source.issue1_4
dc.source.volume59
imec.availabilityPublished - imec
imec.internalnotes12th INFOS Conference - Insulating Films on Semiconductors; June 2001; Udine, Italy


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