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Radiation damage of N-MOSFETS fabricated in a BiCMOS process

dc.contributor.authorKobayashi, K.
dc.contributor.authorOhyama, Hidenori
dc.contributor.authorYoneoka, M.
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorNakabayashi, M.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorTakami., Y.
dc.contributor.authorTakizawa, H.
dc.contributor.authorKohiki, S.
dc.date.accessioned2021-10-14T17:10:14Z
dc.date.available2021-10-14T17:10:14Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5405
dc.sourceIIOimport
dc.titleRadiation damage of N-MOSFETS fabricated in a BiCMOS process
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage227
dc.source.endpage230
dc.source.journalJournal of Materials Science: Materials in Electronics
dc.source.issue4_6
dc.source.volume12
imec.availabilityPublished - imec


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