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Simulation of 0.35 μm / 0.25 μm CMOS technology doping profiles

dc.contributor.authorLorenzini, Martino
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-14T17:17:22Z
dc.date.available2021-10-14T17:17:22Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5456
dc.sourceIIOimport
dc.titleSimulation of 0.35 μm / 0.25 μm CMOS technology doping profiles
dc.typeJournal article
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecHaspeslagh, Luc::0000-0003-3561-3387
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage459
dc.source.endpage463
dc.source.journalVLSI Design
dc.source.issue1_4
dc.source.volume13
imec.availabilityPublished - open access
imec.internalnotes7th Int. Workshop on Computational Electronis (ICWE-7). May 2000; Glasgow


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