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On the calculation of gate tunneling currents in ultra-thin metal-insulator-semiconductor capacitors

dc.contributor.authorMagnus, Wim
dc.contributor.authorSchoenmaker, Wim
dc.date.accessioned2021-10-14T17:18:50Z
dc.date.available2021-10-14T17:18:50Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5466
dc.sourceIIOimport
dc.titleOn the calculation of gate tunneling currents in ultra-thin metal-insulator-semiconductor capacitors
dc.typeJournal article
dc.contributor.imecauthorMagnus, Wim
dc.source.peerreviewno
dc.source.beginpage31
dc.source.endpage35
dc.source.journalMicroelectronics Reliability
dc.source.issue1
dc.source.volume41
imec.availabilityPublished - imec


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