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Simultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers

dc.contributor.authorMavroidis, C.
dc.contributor.authorHarris, J. J.
dc.contributor.authorLee, K.
dc.contributor.authorHarrison, I.
dc.contributor.authorAnsell, B. J.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-14T17:19:41Z
dc.date.available2021-10-14T17:19:41Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5472
dc.sourceIIOimport
dc.titleSimultaneous impurity-band and interface conduction in depth-profiled n-GaN epilayers
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.beginpage579
dc.source.endpage583
dc.source.journalPhysica Status Solidi B
dc.source.issue2
dc.source.volume228
imec.availabilityPublished - imec
imec.internalnotes= paper from 4th Int. Conference on Nitride Semiconductors. July 2006; Denver, CO, USA


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