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Epitaxial laterial overgrowth of GaN on sapphire. An examination of epitaxy quality using synchrotron X-ray topography

dc.contributor.authorMcNally, P. J.
dc.contributor.authorTuomi, T.
dc.contributor.authorLowney, D.
dc.contributor.authorJacobs, Koen
dc.contributor.authorDanilewsky, A. N.
dc.contributor.authorRantamaki, R.
dc.contributor.authorO'Hare, M.
dc.contributor.authorConsidine, L.
dc.date.accessioned2021-10-14T17:19:51Z
dc.date.available2021-10-14T17:19:51Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5473
dc.sourceIIOimport
dc.titleEpitaxial laterial overgrowth of GaN on sapphire. An examination of epitaxy quality using synchrotron X-ray topography
dc.typeJournal article
dc.source.peerreviewno
dc.source.beginpage373
dc.source.endpage382
dc.source.journalPhysica Status Solidi. A
dc.source.issue2
dc.source.volume185
imec.availabilityPublished - imec
imec.internalnotesPaper from the 4th Int Conf on Nitride Semiconductors, 16-20 July 2001, Denver, CO, USA


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