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Heterostructure field effect transistor types with novel gate dielectrics

dc.contributor.authorMistele, D.
dc.contributor.authorRotter, T.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorRöver, K. S.
dc.contributor.authorFedler, F.
dc.contributor.authorKlausing, H.
dc.contributor.authorStemmer, J.
dc.contributor.authorSemchinova, O. K.
dc.contributor.authorAderhold, J.
dc.contributor.authorGraul, J.
dc.date.accessioned2021-10-14T17:21:05Z
dc.date.available2021-10-14T17:21:05Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5481
dc.sourceIIOimport
dc.titleHeterostructure field effect transistor types with novel gate dielectrics
dc.typeJournal article
dc.source.peerreviewno
dc.source.beginpage255
dc.source.endpage258
dc.source.journalPhysica Status Solidi A
dc.source.issue1
dc.source.volume188
imec.availabilityPublished - imec
imec.internalnotesPaper from the 4th Int Conf on Nitride Semiconductors, 16-20 July 2001, Denver, CO, USA


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