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5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates

dc.contributor.authorModak, Prasanta
dc.contributor.authorD'Hondt, Mark
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorVan Daele, Peter
dc.contributor.authorMijlemans, P.
dc.contributor.authorDemeester, Piet
dc.date.accessioned2021-10-14T17:21:32Z
dc.date.available2021-10-14T17:21:32Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5484
dc.sourceIIOimport
dc.title5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorVan Daele, Peter
dc.contributor.imecauthorDemeester, Piet
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.contributor.orcidimecVan Daele, Peter::0000-0003-0557-7741
dc.contributor.orcidimecDemeester, Piet::0000-0003-2810-3899
dc.source.peerreviewno
dc.source.beginpage377
dc.source.endpage378
dc.source.journalElectronics Letters
dc.source.issue6
dc.source.volume37
imec.availabilityPublished - imec


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