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Effect of dielectric layers on the performance of AlGaN-based UV Schottky photodiodes

dc.contributor.authorMonroy, E.
dc.contributor.authorCalle, F.
dc.contributor.authorPau, J. L.
dc.contributor.authorMuñoz, E.
dc.contributor.authorVerdú, M.
dc.contributor.authorSánchez, F. J.
dc.contributor.authorMontojo, M. T.
dc.contributor.authorOmnès, F.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorSan Andrés, E.
dc.date.accessioned2021-10-14T17:22:43Z
dc.date.available2021-10-14T17:22:43Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5492
dc.sourceIIOimport
dc.titleEffect of dielectric layers on the performance of AlGaN-based UV Schottky photodiodes
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.beginpage307
dc.source.endpage310
dc.source.journalPhysica Status Solidi A
dc.source.issue1
dc.source.volume188
imec.availabilityPublished - imec
imec.internalnotesPaper from the 4th Int Conf on Nitride Semiconductors, 16-20 July 2001, Denver, CO, USA


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