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Induced lattice defects in InGaAsP laser diodes by high-temperature gamma ray irradiation

dc.contributor.authorOhyama, Hidenori
dc.contributor.authorHirao, T.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.contributor.authorOnoda, S.
dc.contributor.authorTakami, Y.
dc.contributor.authorItoh, H.
dc.date.accessioned2021-10-14T17:28:43Z
dc.date.available2021-10-14T17:28:43Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5530
dc.sourceIIOimport
dc.titleInduced lattice defects in InGaAsP laser diodes by high-temperature gamma ray irradiation
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1185
dc.source.endpage1188
dc.source.journalPhysica B
dc.source.volume308
imec.availabilityPublished - imec
imec.internalnotesThe 21st International Conference on Defects in Semiconductors; 16-20 July 2001; Giessen, Germany


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