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The impact of post breakdown gate leakage on MOSFET RF performance

dc.contributor.authorPantisano, Luigi
dc.contributor.authorCheung, K. P.
dc.date.accessioned2021-10-14T17:34:04Z
dc.date.available2021-10-14T17:34:04Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5564
dc.sourceIIOimport
dc.titleThe impact of post breakdown gate leakage on MOSFET RF performance
dc.typeJournal article
dc.source.peerreviewno
dc.source.beginpage586
dc.source.endpage587
dc.source.journalIEEE Electron Device Letters
dc.source.issue12
dc.source.volume22
imec.availabilityPublished - imec


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