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Hole-trapping-related transients in shallow n+-p junctions fabricated in a high-energy boron-implanted p well

dc.contributor.authorPoyai, Amporn
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-14T17:37:33Z
dc.date.available2021-10-14T17:37:33Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5585
dc.sourceIIOimport
dc.titleHole-trapping-related transients in shallow n+-p junctions fabricated in a high-energy boron-implanted p well
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage949
dc.source.endpage951
dc.source.journalApplied Physics Letters
dc.source.issue7
dc.source.volume78
imec.availabilityPublished - imec


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