Measurement and simulation of boron diffusion in strained Si1- xGex epitaxial layers with a linearly graded germanium profile
| dc.contributor.author | Krishnasamy, Rajendran | |
| dc.contributor.author | Schoenmaker, Wim | |
| dc.date.accessioned | 2021-10-14T17:39:24Z | |
| dc.date.available | 2021-10-14T17:39:24Z | |
| dc.date.issued | 2001 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/5596 | |
| dc.source | IIOimport | |
| dc.title | Measurement and simulation of boron diffusion in strained Si1- xGex epitaxial layers with a linearly graded germanium profile | |
| dc.type | Journal article | |
| dc.source.peerreview | no | |
| dc.source.beginpage | 1879 | |
| dc.source.endpage | 1884 | |
| dc.source.journal | Solid-State Electronics | |
| dc.source.issue | 11 | |
| dc.source.volume | 45 | |
| imec.availability | Published - imec |
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