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Measurement and simulation of boron diffusion in strained Si1- xGex epitaxial layers

dc.contributor.authorKrishnasamy, Rajendran
dc.contributor.authorSchoenmaker, Wim
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-14T17:40:23Z
dc.date.available2021-10-14T17:40:23Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5602
dc.sourceIIOimport
dc.titleMeasurement and simulation of boron diffusion in strained Si1- xGex epitaxial layers
dc.typeJournal article
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage2022
dc.source.endpage2031
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue9
dc.source.volume48
imec.availabilityPublished - imec


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