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Impact of CMOS processing steps on the drain current kink of NMOSFETS at liquid helium temperature

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.date.accessioned2021-10-14T17:49:51Z
dc.date.available2021-10-14T17:49:51Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5656
dc.sourceIIOimport
dc.titleImpact of CMOS processing steps on the drain current kink of NMOSFETS at liquid helium temperature
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1207
dc.source.endpage1215
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue6
dc.source.volume48
imec.availabilityPublished - imec


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