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High-energy proton radiation induced defects in tin-doped N- tType sSilicon

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.contributor.authorPrivitera, Vittorio
dc.contributor.authorCoffa, S.
dc.contributor.authorLarsen, A. N.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-10-14T17:50:44Z
dc.date.available2021-10-14T17:50:44Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5661
dc.sourceIIOimport
dc.titleHigh-energy proton radiation induced defects in tin-doped N- tType sSilicon
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage477
dc.source.endpage480
dc.source.journalPhysica B
dc.source.volume308-310
imec.availabilityPublished - imec
imec.internalnotesThe 21st International Conference on Defects in Semiconductors; 16-20 July 2001; Giessen, Germany


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