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Defect analysis of n-type silicon strained layers

dc.contributor.authorSimoen, Eddy
dc.contributor.authorLoo, Roger
dc.contributor.authorRoussel, Philippe
dc.contributor.authorCaymax, Matty
dc.contributor.authorBender, Hugo
dc.contributor.authorClaeys, Cor
dc.contributor.authorHerzog, H. J.
dc.contributor.authorBlondeel, A.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-10-14T17:51:29Z
dc.date.available2021-10-14T17:51:29Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5665
dc.sourceIIOimport
dc.titleDefect analysis of n-type silicon strained layers
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorBender, Hugo
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.source.peerreviewno
dc.source.beginpage225
dc.source.endpage227
dc.source.journalMaterials Science in Semiconductor Processing
dc.source.volume4
imec.availabilityPublished - imec


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