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Impact of probe-to-pad contact degradation on the high-frequency charateristics of RF MOSFETs and guidelines to avoid it

dc.contributor.authorVandamme, Ewout
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorVan Dinther, G.
dc.date.accessioned2021-10-14T18:09:01Z
dc.date.available2021-10-14T18:09:01Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5760
dc.sourceIIOimport
dc.titleImpact of probe-to-pad contact degradation on the high-frequency charateristics of RF MOSFETs and guidelines to avoid it
dc.typeJournal article
dc.contributor.imecauthorSchreurs, Dominique
dc.source.peerreviewno
dc.source.beginpage114
dc.source.endpage120
dc.source.journalInternational Journal of RF and Microwave Computer-Aided-Engineering
dc.source.issue3
dc.source.volume11
imec.availabilityPublished - imec


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