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Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures

dc.contributor.authorVandamme, Ewout
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorVan Dinther, G.
dc.date.accessioned2021-10-14T18:09:12Z
dc.date.available2021-10-14T18:09:12Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5761
dc.sourceIIOimport
dc.titleImproved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures
dc.typeJournal article
dc.contributor.imecauthorSchreurs, Dominique
dc.source.peerreviewno
dc.source.beginpage737
dc.source.endpage742
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue4
dc.source.volume48
imec.availabilityPublished - imec


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