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dc.contributor.authorVanhollebeke, Koen
dc.contributor.authorD'Hondt, Mark
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorVan Daele, Peter
dc.contributor.authorDemeester, Piet
dc.date.accessioned2021-10-14T18:15:32Z
dc.date.available2021-10-14T18:15:32Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5794
dc.sourceIIOimport
dc.titleZn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD)
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorVan Daele, Peter
dc.contributor.imecauthorDemeester, Piet
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.contributor.orcidimecVan Daele, Peter::0000-0003-0557-7741
dc.contributor.orcidimecDemeester, Piet::0000-0003-2810-3899
dc.source.peerreviewno
dc.source.beginpage951
dc.source.endpage959
dc.source.journalJournal of Electronic Materials
dc.source.issue8
dc.source.volume30
imec.availabilityPublished - imec


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