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Rutherford backscattering/channeling study of a thin AlGaN layer on Al2O03(0001)

dc.contributor.authorWu, Ming Fang
dc.contributor.authorVantomme, Andre
dc.contributor.authorHogg, S.
dc.contributor.authorLangouche, G.
dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-14T18:26:19Z
dc.date.available2021-10-14T18:26:19Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5846
dc.sourceIIOimport
dc.titleRutherford backscattering/channeling study of a thin AlGaN layer on Al2O03(0001)
dc.typeJournal article
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.beginpage181
dc.source.endpage186
dc.source.journalNuclear Instruments & Methods in Physics Research B
dc.source.issue1_2
dc.source.volume174
imec.availabilityPublished - imec


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