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On the mechanism of electron trap generation in gate oxides

dc.contributor.authorZhang, Wenqi
dc.contributor.authorZhang, Jenny
dc.contributor.authorLalor, M.
dc.contributor.authorBurton, D.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDegraeve, Robin
dc.date.accessioned2021-10-14T18:31:40Z
dc.date.available2021-10-14T18:31:40Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5872
dc.sourceIIOimport
dc.titleOn the mechanism of electron trap generation in gate oxides
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.source.peerreviewno
dc.source.beginpage89
dc.source.endpage94
dc.source.journalMicroelectronic Engineering
dc.source.issue1_4
dc.source.volume59
imec.availabilityPublished - imec
imec.internalnotes12th INFOS Conference - Insulating Films on Semiconductors; June 2001; Udine, Italy


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