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Band alignments in metal-oxide-silicon structures with atomic-layer deposited Al2O3 and ZrO2

dc.contributor.authorAfanas'ev, V. V.
dc.contributor.authorHoussa, Michel
dc.contributor.authorStesmans, Andre
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-14T21:06:56Z
dc.date.available2021-10-14T21:06:56Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5936
dc.sourceIIOimport
dc.titleBand alignments in metal-oxide-silicon structures with atomic-layer deposited Al2O3 and ZrO2
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.beginpage3079
dc.source.endpage3084
dc.source.journalJournal of Applied Physics
dc.source.issue5
dc.source.volume91
imec.availabilityPublished - imec


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