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Impact of annealing-induced compaction on electronic properties of atomic-layer-deposited Al2O3

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.contributor.authorMrstik, B.J.
dc.contributor.authorZhao, Chao
dc.date.accessioned2021-10-14T21:06:57Z
dc.date.available2021-10-14T21:06:57Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5937
dc.sourceIIOimport
dc.titleImpact of annealing-induced compaction on electronic properties of atomic-layer-deposited Al2O3
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.source.peerreviewno
dc.source.beginpage1678
dc.source.endpage1680
dc.source.journalApplied Physics Letters
dc.source.issue9
dc.source.volume81
imec.availabilityPublished - imec


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