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Ta2O5 as gate dielectric maerial for low-voltage organic thin-film transistors

dc.contributor.authorBartic, Carmen
dc.contributor.authorJansen, Henri
dc.contributor.authorCampitelli, Andrew
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-14T21:08:11Z
dc.date.available2021-10-14T21:08:11Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5994
dc.sourceIIOimport
dc.titleTa2O5 as gate dielectric maerial for low-voltage organic thin-film transistors
dc.typeJournal article
dc.contributor.imecauthorBartic, Carmen
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage65
dc.source.endpage72
dc.source.journalOrganic Electronics
dc.source.volume3
imec.availabilityPublished - imec


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