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Determination of crystal misorientation in epitaxial lateral overgrowth of GaN

dc.contributor.authorChen, W.M.
dc.contributor.authorMcNally, P.J.
dc.contributor.authorJacobs, Koen
dc.contributor.authorTuomi, T.
dc.contributor.authorDanilewsky, A.N.
dc.contributor.authorZytkiewicz, Z.R.
dc.contributor.authorLowney, D.
dc.contributor.authorKanatharana, J.
dc.contributor.authorKnuuttila, L.
dc.contributor.authorRiikonen, J.
dc.date.accessioned2021-10-14T21:14:00Z
dc.date.available2021-10-14T21:14:00Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6103
dc.sourceIIOimport
dc.titleDetermination of crystal misorientation in epitaxial lateral overgrowth of GaN
dc.typeJournal article
dc.source.peerreviewno
dc.source.beginpage94
dc.source.endpage102
dc.source.journalJournal of Crystal Growth
dc.source.issue1
dc.source.volume243
imec.availabilityPublished - imec


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