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gamma-Irradiation hardness of short-channel NMOSFETS fabricated in a 0.5 μm SOI technology

dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.contributor.authorEfremov, A.
dc.contributor.authorLitovchenko, V. G.
dc.contributor.authorEvtukh, A.
dc.contributor.authorKizjak, A.
dc.contributor.authorRassamakin, J.
dc.date.accessioned2021-10-14T21:15:11Z
dc.date.available2021-10-14T21:15:11Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6119
dc.sourceIIOimport
dc.titlegamma-Irradiation hardness of short-channel NMOSFETS fabricated in a 0.5 μm SOI technology
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage429
dc.source.endpage434
dc.source.journalNuclear Instruments & Methods in Physics Research B
dc.source.issue1_4
dc.source.volume186
imec.availabilityPublished - imec
imec.internalnotesSymp. B on Defect Engineering of Advanced Semiconductor Devices, E-MRS Spring Conference. June 2001; Strasbourg, France


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