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Impact of probe penetration on the electrical characterization of Sub-50 nm profiles

dc.contributor.authorClarysse, Trudo
dc.contributor.authorVanhaeren, Danielle
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-14T21:15:40Z
dc.date.available2021-10-14T21:15:40Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6125
dc.sourceIIOimport
dc.titleImpact of probe penetration on the electrical characterization of Sub-50 nm profiles
dc.typeJournal article
dc.contributor.imecauthorVanhaeren, Danielle
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecVanhaeren, Danielle::0000-0001-8624-9533
dc.source.peerreviewno
dc.source.beginpage459
dc.source.endpage466
dc.source.journalJournal of Vacuum Science & Technology B
dc.source.issue1
dc.source.volume20
imec.availabilityPublished - imec
imec.internalnotes6th Int. Workshop on Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semiconductors. April 2001; Napa Valley, CA, USA


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